Global Modeling of High-Frequency Devices
نویسندگان
چکیده
In this work, we utilize the Finite-Difference Time Domain (FDTD) Method coupled to a full band, Cellular Monte Carlo simulator to model high-frequency devices. Replacing the traditional Poisson solver with a more robust electromagnetic (EM) solver provides a complete solution of the Lorentz force resulting in a more accurate model for determining the small-signal response of microwave transistors and various other high-frequency devices.
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تاریخ انتشار 2012